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| SMD Type Dual N-Channel 2.5-V (G-S) MOSFET KI5904DC IC IC Features Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 ) TA = 25 TA = 85 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation * TA = 25 TA = 85 Operating Junction and Storage Temperature Range Soldering Recommendations *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 1.8 2.1 1.1 -55 to 150 260 Symbol VDS VGS ID 4.2 3.0 10 0.9 1.1 0.6 W 5secs 20 12 3.1 2.2 A Steady State Unit V Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient * Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1" FR4 Board. t 5 sec Symbol RthJA RthJF Typical 50 90 30 Maximum 60 110 40 /W Unit Steady-State Steady-State www.kexin.com.cn 1 SMD Type KI5904DC Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Drain Source On State Resistance* Forward Transconductanceb Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test :Pulse width Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.9 A, di/dt = 100 A/ s VDD=10V,RL=10 ,ID=1A,VGEN=10V,RG=6 VDS = 10 V, VGS = 4.5V, ID = 3.1 A Testconditons VDS = VGS, ID = 250 VDS = 0 V, VGS = A 12 V Min 0.6 100 1 Typ Max IC IC Unit V nA A VDS = 16V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85 VDS 5 V, VGS = 4.5 V 10 0.065 0.115 8 0.8 4 0.6 1.3 12 35 19 9 40 5 A 0.075 0.143 S 1.2 7.5 nC V VGS = 4.5 V, ID = 3.1 A VGS = 2.5V, ID = 2.3A VDS = 10 V, ID = 3.1 A IS = 0.9 A, VGS = 0 V 18 55 30 15 80 ns ns 300 s,duty cycle 2% 2 www.kexin.com.cn |
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